• Delivers an EVM of 2.5 percent and meets or exceeds WiMAX and LTE spectral mask requirements with an output power of 28dBm in the 2.3 to 2.4GHz, 2.4 to 2.5GHz, and 2.5 to 2.7GHz frequency ranges
• The bias of the PA may be controlled to accommodate a 22dB gain step to increase the dynamic range of the system
• Offers high gain of 34dB and high linear output power, with best-in-class efficiency
• Maintains linearity over a wide range of temperatures and power outputs while the external match enables tuning for output power over multiple bands
• Also features internal input and inter-stage matching, a power-down mode and power detection
• Features InGaP HBT semiconductor technology and is packaged in a leadless chip carrier with a backside ground

See also:

• RF Micro Devices products
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